MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

According to one embodiment, a magnetic memory device includes a magnetoresistance effect element. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic layer, a first non-magnetic layer between the first ferromagnetic layer an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: EEH, Young Min, ISODA, Taiga, KITAGAWA, Eiji, SAWADA, Kazuya, OIKAWA, Tadaaki
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:According to one embodiment, a magnetic memory device includes a magnetoresistance effect element. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic layer, a first non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, and a second non-magnetic layer between the second ferromagnetic layer and the third ferromagnetic layer. The second ferromagnetic layer is between the first ferromagnetic layer and the third ferromagnetic layer. The first non-magnetic layer contains an oxide containing magnesium (Mg). The third ferromagnetic layer contains silicon (Si) or germanium (Ge).