SEMICONDUCTOR STORAGE DEVICE

SEMICONDUCTOR STORAGE DEVICE

A semiconductor storage device includes a first conductive layer; a first insulating layer between the first and second conductive layers; a second insulating layer between the first conductive layer and the first insulating layer; a third insulating layer between the second conductive layer and the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHIMADA, Yusuke, NAGASHIMA, Satoshi, CAI, Weili, ISHIKAWA, Takayuki, NARASAKI, Ryota, HAN, Yefei
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor storage device includes a first conductive layer; a first insulating layer between the first and second conductive layers; a second insulating layer between the first conductive layer and the first insulating layer; a third insulating layer between the second conductive layer and the first insulating layer; a fourth insulating layer between the second conductive layer and the third conductive layer; a fifth insulating layer between the second conductive layer and the fourth insulating layer; and a sixth insulating layer between the third conductive layer and the fourth insulating layer. The first conductive layer has a first surface. The second conductive layer has a second surface. A barrier conductive film containing at least one of nitrogen (N) or titanium (Ti) is provided on the first surface and the second surface.