METHODS OF ATOMIC LAYER DEPOSITION

Methods for depositing metal-containing films on a substrate are described. The substrate is exposed to a metal precursor and an in situ steam generated oxidant to form the metal-containing film (e.g., metal oxide). The exposures can be sequential or simultaneous. An atomic layer deposition method i...

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Bibliographische Detailangaben
Hauptverfasser:	Chaney, Kendrick H, Sato, Tatsuya E
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Methods for depositing metal-containing films on a substrate are described. The substrate is exposed to a metal precursor and an in situ steam generated oxidant to form the metal-containing film (e.g., metal oxide). The exposures can be sequential or simultaneous. An atomic layer deposition method is described that includes a forming gas anneal operation as part of the deposition method.