METHOD AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR LAYER
The present disclosure provides a method and system for manufacturing a semiconductor layer. The method includes: placing a first wafer in a cavity to form a metal film on the first wafer; before forming the metal film, the temperature inside the cavity is a first temperature; transferring the first...
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Format: | Patent |
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Zusammenfassung: | The present disclosure provides a method and system for manufacturing a semiconductor layer. The method includes: placing a first wafer in a cavity to form a metal film on the first wafer; before forming the metal film, the temperature inside the cavity is a first temperature; transferring the first wafer on which the metal film has been formed out of the cavity; the temperature in the cavity is a second temperature, and the second temperature is greater than the first temperature; introducing an inert gas into the cavity to cool the cavity, such that the temperature in the cavity is equal to the first temperature; after the temperature in the cavity is equal to the first temperature, placing a second wafer in the cavity to form the metal film on the second wafer. The manufacturing method can reduce the defects on the surface of the metal film. |
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