SUBSTRATE PROCESSING APPARATUS AND OPERATION METHOD FOR SUBSTRATE PROCESSING APPARATUS

SUBSTRATE PROCESSING APPARATUS AND OPERATION METHOD FOR SUBSTRATE PROCESSING APPARATUS

In one embodiment, a method for operating a substrate processing apparatus comprising a chamber in which a fluorine/silicon-containing substance is deposited on an inner wall through an oxide film removal process for a substrate placed therein, and an antenna installed outside the chamber to which R...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JUNG, Bong Ju, KANG, Kyu Wan, YANG, Seung Kook
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In one embodiment, a method for operating a substrate processing apparatus comprising a chamber in which a fluorine/silicon-containing substance is deposited on an inner wall through an oxide film removal process for a substrate placed therein, and an antenna installed outside the chamber to which RF power is applied, the method comprising: decomposing thermally the fluorine/silicon-containing substance through heating the inner wall of the chamber to 75° C. or more by supplying an inert gas to the inside of the chamber and applying RF power to the antenna.