WAFER WITH LOCALIZED SEMICONDUCTOR ON INSULATOR REGIONS WITH CAVITY STRUCTURES

WAFER WITH LOCALIZED SEMICONDUCTOR ON INSULATOR REGIONS WITH CAVITY STRUCTURES

The present disclosure relates to semiconductor structures and, more particularly, to a wafer with localized cavity structures and methods of manufacture. A structure includes a bulk substrate with localized semiconductor on insulator (SOI) regions and bulk device regions, the localized SOI regions...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ELLIS-MONAGHAN, John J, PORTH, Bruce W, ADUSUMILLI, Siva P, STAMPER, Anthony K
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure relates to semiconductor structures and, more particularly, to a wafer with localized cavity structures and methods of manufacture. A structure includes a bulk substrate with localized semiconductor on insulator (SOI) regions and bulk device regions, the localized SOI regions includes multiple cavity structures and substrate material of the bulk substrate.