SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR STORAGE DEVICE

SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR STORAGE DEVICE

According to one embodiment, a semiconductor storage device includes a substrate, a first electric charge holder, and a channel layer. At least a part of the first electric charge holder is curved in a first cross section along a surface of the substrate. The channel layer is inside the first electr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HAMADA, Tatsufumi, MITSUNO, Yosuke, KUKI, Tomohiro, SOTOME, Shinichi, TSUDA, Muneyuki
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:According to one embodiment, a semiconductor storage device includes a substrate, a first electric charge holder, and a channel layer. At least a part of the first electric charge holder is curved in a first cross section along a surface of the substrate. The channel layer is inside the first electric charge holder in the first cross section. At least a part of the channel layer is curved in the first cross section. The first electric charge holder has a curvature varying in accordance with a position in the first cross section. The channel layer has a film thickness varying in accordance with the curvature of the first electric charge holder in the first cross section.