SEMICONDUCTOR STORAGE DEVICE

A semiconductor storage device includes a stacked body where first layers of a first insulating material, and second layers are stacked alternately, and plate-like portions penetrating through the stacked body in a stacking direction thereof and extending in a first direction intersecting the stacking direction. Each second layer includes a first insulating area and an electrically conductive area, the former extending from a first edge portion of the stacked body in the first direction thereby occupying at least an area between a first edge portion of each plate-like portions and the first edge portion of the stacked body, and the latter being connected to the first insulating area in the first direction. A boundary between the first insulating area and the electrically conductive area is located farther from the first edge portion of plate-like portions along the first direction with respect to the first edge portion of the stacked body.