SEMICONDUCTOR MEMORY APPARATUS AND PROGRAMMING METHOD THEREOF

SEMICONDUCTOR MEMORY APPARATUS AND PROGRAMMING METHOD THEREOF

A semiconductor storage apparatus programming a memory cell through improved ISPP is introduced. A NAND flash memory programming method includes a step of selecting a page of a memory cell array and applying a programming pulse based on the ISPP to the selected page. The programming pulse applied by...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Takeshita, Toshiaki, Yano, Masaru
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A semiconductor storage apparatus programming a memory cell through improved ISPP is introduced. A NAND flash memory programming method includes a step of selecting a page of a memory cell array and applying a programming pulse based on the ISPP to the selected page. The programming pulse applied by the ISPP includes a sacrificial programming pulse for which a program verification becomes unqualified due to an initial programming pulse and a last programming pulse having an increment larger than any increment of other programming pulses.