METHOD AND APPARATUS TO DETERMINE A PATTERNING PROCESS PARAMETER

METHOD AND APPARATUS TO DETERMINE A PATTERNING PROCESS PARAMETER

A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respecti...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Den Boef, Arie Jeffrey, TSIATMAS, Anagnostis, Theeuwes, Thomas, Hinnen, Paul Christiaan, Mc Namara, Elliott Gerard, De La Fuente Valentin, Maria Isabel, Shahrjerdy, Mir Homayoun, Wang, Shu-jin
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTROGRAPHY
HOLOGRAPHY
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Beschreibung
Zusammenfassung:A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.