POWER SEMICONDUCTOR DEVICE AND POWER CONVERTER

A power semiconductor device includes a termination region having a corner and an element region inside the termination region. An SiC substrate spans the element region and the termination region. An interlayer insulating film has an outer edge in the termination region. A source electrode is in co...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	TAGUCHI, Kensuke, NAKATA, Kazunari
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A power semiconductor device includes a termination region having a corner and an element region inside the termination region. An SiC substrate spans the element region and the termination region. An interlayer insulating film has an outer edge in the termination region. A source electrode is in contact with the SiC substrate in the element region, and has an outer edge on the interlayer insulating film in the termination region. An insulating protective film covers the outer edge of the interlayer insulating film and the outer edge of the source electrode, and has an inner edge on the source electrode. At the corner of the termination region, the outer edge of the interlayer insulating film has a radius of curvature R1, and the inner edge of the insulating protective film has a radius of curvature R2. The radius of curvature R2 is greater than the radius of curvature R1.