HIGH CRITICAL TEMPERATURE METAL NITRIDE LAYER WITH OXIDE OR OXYNITRIDE SEED LAYER

HIGH CRITICAL TEMPERATURE METAL NITRIDE LAYER WITH OXIDE OR OXYNITRIDE SEED LAYER

A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a diff...

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Bibliographische Detailangaben
Hauptverfasser: Zhu, Mingwei, Chen, Zhebo, Patibandla, Nag B, Yang, Zihao, Cao, Yong, Chowdhury, Mohammad Kamruzzaman, Lavan, Shane, Mangipudi, Shriram
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.