PERMANENT BONDING AND PATTERNING MATERIAL

Methods are disclosed to prepare permanent materials that can be coated onto microelectronic substrates or used for other structural or optical applications. The permanent materials are thermally stable to at least 300° C., cure using a photo or thermal process, exhibit good chemical resistance (inc...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Liu, Xiao, Lee, Chia-Hsin, Huang, Baron, Sejoubsari, Reihaneh
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR METALLURGY MICROSTRUCTURAL TECHNOLOGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Methods are disclosed to prepare permanent materials that can be coated onto microelectronic substrates or used for other structural or optical applications. The permanent materials are thermally stable to at least 300° C., cure using a photo or thermal process, exhibit good chemical resistance (including during metal passivation), and have a lifespan of at least 5 years, preferably at least 10 years, in the final device. Advantageously, these materials can also be bonded at room temperature. The materials exhibit no movement or squeeze-out after bonding and adhere to a variety of substrate types. A chip-to-chip, chip-to-wafer, and/or wafer-to-wafer bonding method utilizing this material is also described.