Photovoltaic Cell With an Aluminium-Arsenic and Indium-Phosphorous Based Heterojunction, Associated Multi-Junction Cell and Associated Method

Photovoltaic Cell With an Aluminium-Arsenic and Indium-Phosphorous Based Heterojunction, Associated Multi-Junction Cell and Associated Method

The present invention refers to a photovoltaic cell (1) comprising a heterojunction with a base layer (L4, L4′, L4″) made from an Aluminium-Ar-senic-basedalloy and an emitter layer (L3, L3′) made from an Indium-Phosphorous based alloy wherein the emitter layer (L3, L3′) has a thickness smaller than...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: BEN SLIMANE, Ahmed
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present invention refers to a photovoltaic cell (1) comprising a heterojunction with a base layer (L4, L4′, L4″) made from an Aluminium-Ar-senic-basedalloy and an emitter layer (L3, L3′) made from an Indium-Phosphorous based alloy wherein the emitter layer (L3, L3′) has a thickness smaller than 100 nm and acts as a passivation layer to prevent oxidation of the base layer and reduces surface recombination (L4, L4′, L4″).