INTEGRATED FLOWABLE LOW-K GAP-FILL AND PLASMA TREATMENT

Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, film densification by low temperature inductively coupled plasma (ICP) treatment (

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Bibliographische Detailangaben
Hauptverfasser:	Kim, Myungsun, Seamons, Martin J, Colombeau, Benjamin, Liang, Jingmei, Stolfi, Michael
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, film densification by low temperature inductively coupled plasma (ICP) treatment (