REMOVING METAL CONTAMINATION FROM SURFACES OF A PROCESSING CHAMBER

A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCU4), carbon tetrachloride (CCI4), a hydrocarbon (CxHy where x and y are integers) and molecular chlorine (CI2), boron trichloride (BCI3), and thienyl chloride (SOCI2); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.