FABRICATING SUB-MICRON CONTACTS TO BURIED WELL DEVICES

FABRICATING SUB-MICRON CONTACTS TO BURIED WELL DEVICES

A method for forming a semiconductor structure. Two isolation structures are formed in a semiconductor. A cavity is etched in the semiconductor between the two isolation structures in the semiconductor. Dopants are implanted into a bottom side of the cavity to form a doped region in the semiconducto...

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Hauptverfasser: Schmitz, Adele, Lee, Kangmu Min, Choi, Maxwell Daehan, Jura, Michael Pemberton, Jackson, Clayton, Chappell, James, Wright, Jeffrey Alden, Ha, Wonill
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Schmitz, Adele
Lee, Kangmu Min
Choi, Maxwell Daehan
Jura, Michael Pemberton
Jackson, Clayton
Chappell, James
Wright, Jeffrey Alden
Ha, Wonill
description A method for forming a semiconductor structure. Two isolation structures are formed in a semiconductor. A cavity is etched in the semiconductor between the two isolation structures in the semiconductor. Dopants are implanted into a bottom side of the cavity to form a doped region in the semiconductor below the cavity between the two isolation structures. A contact is formed in the cavity. The contact is on the doped region and in direct contact with the doped region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FABRICATING SUB-MICRON CONTACTS TO BURIED WELL DEVICES
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