FABRICATING SUB-MICRON CONTACTS TO BURIED WELL DEVICES

FABRICATING SUB-MICRON CONTACTS TO BURIED WELL DEVICES

A method for forming a semiconductor structure. Two isolation structures are formed in a semiconductor. A cavity is etched in the semiconductor between the two isolation structures in the semiconductor. Dopants are implanted into a bottom side of the cavity to form a doped region in the semiconducto...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Schmitz, Adele, Lee, Kangmu Min, Choi, Maxwell Daehan, Jura, Michael Pemberton, Jackson, Clayton, Chappell, James, Wright, Jeffrey Alden, Ha, Wonill
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for forming a semiconductor structure. Two isolation structures are formed in a semiconductor. A cavity is etched in the semiconductor between the two isolation structures in the semiconductor. Dopants are implanted into a bottom side of the cavity to form a doped region in the semiconductor below the cavity between the two isolation structures. A contact is formed in the cavity. The contact is on the doped region and in direct contact with the doped region.