SEMICONDUCTOR INTERCONNECT, ELECTRODE FOR SEMICONDUCTOR DEVICE, AND METHOD OF PREPARING MULTIELEMENT COMPOUND THIN FILM

SEMICONDUCTOR INTERCONNECT, ELECTRODE FOR SEMICONDUCTOR DEVICE, AND METHOD OF PREPARING MULTIELEMENT COMPOUND THIN FILM

A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a...

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Bibliographische Detailangaben
Hauptverfasser: KANG, Youngjae, YOO, Joungeun, LEE, SangWoon, YOON, Duseop
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm:Mn+1AXn  Formula 1In Formula 1, M, A, X, and n are as described in the specification.