MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME

A bias voltage generator includes a first current path, a first voltage clamp device, and a first buffer. The bias voltage generator receives a reference voltage and generates a first bias voltage based on a voltage difference between the reference voltage and a first drive voltage, the first voltag...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YUH, Perng-Fei, WU, Shao-Ting, LIN, Yu-Fan
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A bias voltage generator includes a first current path, a first voltage clamp device, and a first buffer. The bias voltage generator receives a reference voltage and generates a first bias voltage based on a voltage difference between the reference voltage and a first drive voltage, the first voltage clamp device generates the first drive voltage based on the first bias voltage by applying the first drive voltage to the first current path, and the first buffer receives the first bias voltage and generates a second bias voltage based on the first bias voltage. A second current path includes a resistance-based memory device, and a second voltage clamp device generates a second drive voltage based on the second bias voltage and applies the second drive voltage to the second current path.