INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME

INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME

An integrated circuit includes a first and second set of gate structures. A center of each of the first set of gate structures is separated from a center of an adjacent gate of the first set of gate structures in a first direction by a first pitch. A center of each of the second set of gate structur...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HSU, Chin-Chang, LEE, Hsien-Hsin Sean, CHANG, Yu-Jung, YANG, Wen-Ju
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit includes a first and second set of gate structures. A center of each of the first set of gate structures is separated from a center of an adjacent gate of the first set of gate structures in a first direction by a first pitch. A center of each of the second set of gate structures is separated from a center of an adjacent gate of the second set of gate structures in the first direction by the first pitch. The first and second set of gate structures extend in a second direction. A gate of the first set of gate structures is aligned in the second direction with a corresponding gate of the second set of gate structures. The gate of the first set of gate structures is separated from the corresponding gate of second set of gate structures in the second direction by a first distance.