METHOD OF MAKING HIGH CRITICAL TEMPERATURE METAL NITRIDE LAYER

METHOD OF MAKING HIGH CRITICAL TEMPERATURE METAL NITRIDE LAYER

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, incr...

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Bibliographische Detailangaben
Hauptverfasser: Zhu, Mingwei, Chen, Zhebo, Patibandla, Nag B, Yang, Zihao, Cao, Yong, Chowdhury, Mohammad Kamruzzaman, Lavan, Shane, Mangipudi, Shriram
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.