SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS

There is provided a solid-state imaging device having a configuration suitable for high integration. The solid-state imaging device includes a semiconductor layer, a photoelectric converter, a storage capacitor, and a first transistor. The photoelectric converter is provided in the semiconductor lay...

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Bibliographische Detailangaben
Hauptverfasser:	SUZUKI, Atsushi, SAKANO, Yorito, TAKAHASHI, Ryo, YOSHIKAWA, Ryoichi, CHIBA, Yohei, KOGA, Shinichi, SUENAGA, Jun, SHIOYAMA, Tadamasa, FURUYA, Shogo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	There is provided a solid-state imaging device having a configuration suitable for high integration. The solid-state imaging device includes a semiconductor layer, a photoelectric converter, a storage capacitor, and a first transistor. The photoelectric converter is provided in the semiconductor layer, and generates an electric charge corresponding to a received light amount by photoelectric conversion. The storage capacitor is provided on the semiconductor layer, and includes a first insulating film having a first electrical film thickness. The first transistor is provided on the semiconductor layer, and includes a second insulating film having a second electrical film thickness larger than the first electrical film thickness.