PHOTOPLETHYSMOGRAPHY SENSOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

A photoplethysmography sensor is provided. The photoplethysmography sensor comprises a photoelectric conversion element including a first terminal and a second terminal, and configured to receive light reflected from a blood vessel and generate a current corresponding to the received light, a current-to-voltage converter configured to receive the generated current through a first input terminal and a second input terminal, and configured to generate an output voltage corresponding to the received current, and a switch configured to connect the photoelectric conversion element to the current-to-voltage converter according to a control signal, wherein in response to the control signal of a first level, the switch connects the first terminal of the photoelectric conversion element to the first input terminal of the current-to-voltage converter, and connects the second terminal of the photoelectric conversion element to the second input terminal of the current-to-voltage converter, and wherein in response to the control signal of a second level different from the first level, the switch connects the first terminal of the photoelectric conversion element to the second input terminal of the current-to-voltage converter, and connects the second terminal of the photoelectric conversion element to the first input terminal of the current-to-voltage converter.