METHOD FOR MANUFACTURING SEMICONDUCTOR AND MULTI-PIECE DEPOSITION DEVICE

Examples of the application provide a method for manufacturing a semiconductor and a multi-piece deposition device. The method for manufacturing the semiconductor includes: performing a first-round deposition process on a substrate in the multi-piece deposition device; taking out the substrate after the first-round deposition process is completed; introducing an auxiliary gas into the multi-piece deposition device, and forming plasmas from the auxiliary gas; placing a substrate to be deposited in the multi-piece deposition device; and performing a second-round deposition process on the substrate in the multi-piece deposition device. The auxiliary gas is introduced and converted into the plasmas in a time interval of waiting time between the first-round deposition process and the second-round deposition process.