LOW RESISTIVITY WAFER AND METHOD OF MANUFACTURING THEREOF

LOW RESISTIVITY WAFER AND METHOD OF MANUFACTURING THEREOF

A semiconductor wafer including a single crystal doped with a dopant, wherein a resistivity of the wafer is 0.7 mΩ-cm or less, and wherein a striation height of the wafer is 6 mm or more. The resistivity of the wafer may be 0.8 mΩ-cm or less, and the striation height may be 13 mm or more. The resist...

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Bibliographische Detailangaben
Hauptverfasser: UTO, Masayuki, NARUSHIMA, Yasuhito
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A semiconductor wafer including a single crystal doped with a dopant, wherein a resistivity of the wafer is 0.7 mΩ-cm or less, and wherein a striation height of the wafer is 6 mm or more. The resistivity of the wafer may be 0.8 mΩ-cm or less, and the striation height may be 13 mm or more. The resistivity of the wafer may be 0.7 mΩ-cm or less, and the striation may be 22 mm or more. Example features relate to a method of making a semiconductor wafer that includes adding a dopant to a silicon melt, rotationally pulling a crystal from the silicon melt, and applying a magnetic field of 3000 G or more such that the semiconductor wafer has a resistivity that is equal to or less than 0.8 mΩ-cm and a striation height that is equal to or more than 13 mm.