4H-SIC ELECTRONIC DEVICE WITH IMPROVED SHORT-CIRCUIT PERFORMANCES, AND MANUFACTURING METHOD THEREOF

4H-SIC ELECTRONIC DEVICE WITH IMPROVED SHORT-CIRCUIT PERFORMANCES, AND MANUFACTURING METHOD THEREOF

An electronic device includes a semiconductor body of silicon carbide, and a body region at a first surface of the semiconductor body. A source region is disposed in the body region. A drain region is disposed at a second surface of the semiconductor body. A doped region extends seamlessly at the en...

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Bibliographische Detailangaben
Hauptverfasser: MAGRI', Angelo, SAGGIO, Mario Giuseppe, ZANETTI, Edoardo, GUARNERA, Alfio
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An electronic device includes a semiconductor body of silicon carbide, and a body region at a first surface of the semiconductor body. A source region is disposed in the body region. A drain region is disposed at a second surface of the semiconductor body. A doped region extends seamlessly at the entire first surface of the semiconductor body and includes one or more first sub-regions having a first doping concentration and one or more second sub-regions having a second doping concentration lower than the first doping concentration. Thus, the device has zones alternated to each other having different conduction threshold voltage and different saturation current.