SELF-ALIGNED VERTICAL INTEGRATION OF THREE-TERMINAL MEMORY DEVICES

SELF-ALIGNED VERTICAL INTEGRATION OF THREE-TERMINAL MEMORY DEVICES

A three-dimensional (3D) memory structure includes memory cells and a plurality of oxide layers and a plurality of word line layers. The plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction. A plurality of double channel holes extend through th...

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Bibliographische Detailangaben
Hauptverfasser: SHEN, Meihua, PAN, Yang, HOANG, John, LILL, Thorsten, GUNAWAN, Gereng, WU, Hui-Jung
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A three-dimensional (3D) memory structure includes memory cells and a plurality of oxide layers and a plurality of word line layers. The plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction. A plurality of double channel holes extend through the plurality of oxide layers and the plurality of word line layers in the first direction. The plurality of double channel holes have a peanut-shaped cross-section in a second direction that is transverse to the first direction.