GAS MIXTURE INCLUDING HYDROGEN FLUORIDE, ALCOHOL AND AN ADDITIVE FOR PREVENTING STICTION OF AND/OR REPAIRING HIGH ASPECT RATIO STRUCTURES

GAS MIXTURE INCLUDING HYDROGEN FLUORIDE, ALCOHOL AND AN ADDITIVE FOR PREVENTING STICTION OF AND/OR REPAIRING HIGH ASPECT RATIO STRUCTURES

A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface...

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Bibliographische Detailangaben
Hauptverfasser: DYLEWICZ, Rafal, ZHU, Ji, MELAET, Gerome Michel Dominique, LAVDOVSKY, Nathan, MUI, David
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CLEANING
CLEANING IN GENERAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PERFORMING OPERATIONS
PREVENTION OF FOULING IN GENERAL
SEMICONDUCTOR DEVICES
TRANSPORTING
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Zusammenfassung:A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.