TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORY

Examples may include techniques to implement a SET write operation to a selected memory cell include in a memory array. Examples include selecting the memory cell that includes phase change material and applying various currents over various periods of time during a nucleation stage and a crystal gr...

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Bibliographische Detailangaben

Hauptverfasser:	RANGAN, Sanjay, UMAPATHY, Shylesh, RAO, Hemant P
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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