TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORY

TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORY

Examples may include techniques to implement a SET write operation to a selected memory cell include in a memory array. Examples include selecting the memory cell that includes phase change material and applying various currents over various periods of time during a nucleation stage and a crystal gr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: RANGAN, Sanjay, UMAPATHY, Shylesh, RAO, Hemant P
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:Examples may include techniques to implement a SET write operation to a selected memory cell include in a memory array. Examples include selecting the memory cell that includes phase change material and applying various currents over various periods of time during a nucleation stage and a crystal growth stage to cause the memory cell to be in a SET logical state.