MAGNETIC TUNNEL JUNCTION STRUCTURE AND INTEGRATION SCHEMES

MAGNETIC TUNNEL JUNCTION STRUCTURE AND INTEGRATION SCHEMES

A memory device is provided, the memory device comprising a contact pillar in a dielectric layer. A magnetic tunnel junction may be provided over the contact pillar. A barrier layer may be provided on a sidewall of the magnetic tunnel junction and extending over a horizontal surface of the dielectri...

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Bibliographische Detailangaben
Hauptverfasser: JANG, SUK HEE, THIYAGARAJAH, NAGANIVETHA, TAN, FUNAN, YOU, YOUNG SEON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A memory device is provided, the memory device comprising a contact pillar in a dielectric layer. A magnetic tunnel junction may be provided over the contact pillar. A barrier layer may be provided on a sidewall of the magnetic tunnel junction and extending over a horizontal surface of the dielectric layer. A spacer may be provided over the barrier layer.