WAFER CARRIER FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION

A wafer carrier for metal organic chemical vapor deposition includes at least one wafer sub-carrier that is in a groove structure and that is configured to place an epitaxial wafer substrate. A first space in the wafer sub-carrier is filled with a first thermally conductive material. The first space...

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Bibliographische Detailangaben
Hauptverfasser:	WAN, Yuxi, PENG, Zetao
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A wafer carrier for metal organic chemical vapor deposition includes at least one wafer sub-carrier that is in a groove structure and that is configured to place an epitaxial wafer substrate. A first space in the wafer sub-carrier is filled with a first thermally conductive material. The first space is a space between a flat edge of the epitaxial wafer substrate and a side wall of the wafer sub-carrier when the epitaxial wafer substrate is placed on the wafer sub-carrier. A thermal conductivity of the first thermally conductive material is not lower than a thermal conductivity of the wafer sub-carrier.