SINGLE MODE SEMICONDUCTOR LASER WITH PHASE CONTROL

The invention relates to a method for producing a semiconductor laser comprising the method steps: generating a lateral structure layer, at least in the material abrasion areas, a basic selection of the laser modes amplified or amplifiable through stimulated emission taking place via the lateral str...

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Bibliographische Detailangaben
Hauptverfasser:	Koslowski, Nicolas, Koslowski, Tim
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	The invention relates to a method for producing a semiconductor laser comprising the method steps: generating a lateral structure layer, at least in the material abrasion areas, a basic selection of the laser modes amplified or amplifiable through stimulated emission taking place via the lateral structure layer; and generating an optical element for defining the phasing of the amplified or amplifiable laser modes, the optical element being generated in such a manner that it has a distance d to an end of the lateral structure layer in the longitudinal direction of the waveguide ridge, distance d fulfilling the conditionmin⁢d-m·λe⁢f⁢f2≤λe⁢f⁢f4,being a natural number (m∈) and λeff being the effective wavelength in the material.