POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

A power semiconductor device includes a semiconductor layer of silicon carbide (SiC), at least one trench that extends in one direction, a gate insulating layer disposed on at least an inner wall of the at least one trench, at least one gate electrode layer disposed on the gate insulating layer, a d...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HA, Jeong Mok, KIM, Sin A, KIM, Tae Youp, WOO, Hyuk
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A power semiconductor device includes a semiconductor layer of silicon carbide (SiC), at least one trench that extends in one direction, a gate insulating layer disposed on at least an inner wall of the at least one trench, at least one gate electrode layer disposed on the gate insulating layer, a drift region disposed in the semiconductor layer at least on one side of the at least one gate electrode layer, a well region disposed in the semiconductor layer to be deeper than the at least one gate electrode layer, a source region disposed in the well region, and at least one channel region disposed in the semiconductor layer of one side of the at least one gate electrode layer between the drift region and the source region.