SEMICONDUCTOR DEVICE

A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric film extending on the lower electrode along a side surface of the lower electrode that is perpendicular to the substrate, an upper electrode on the capacitor dielectric film, an interface layer including a hydro...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM, Jun Kwan, KIM, Jin Sub, NOH, Woo Choel, KIM, Kyoung-Hee, SHIN, Yong Jin, KIM, Ik Soo
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric film extending on the lower electrode along a side surface of the lower electrode that is perpendicular to the substrate, an upper electrode on the capacitor dielectric film, an interface layer including a hydrogen blocking film and a hydrogen bypass film on the upper electrode, the hydrogen blocking film including a conductive material, and a contact plug penetrating the interface layer and electrically connected to the upper electrode.