ELECTRODE, SEMICONDUCTOR LASER ELEMENT, AND CHIP-ON-SUBMOUNT

ELECTRODE, SEMICONDUCTOR LASER ELEMENT, AND CHIP-ON-SUBMOUNT

An electrode comprising a Ti layer and a Pt layer that are sequentially laid on a surface of a p-type semiconductor layer. Further, a thermal impedance per unit area of a contact portion that is in contact with the surface of the p-type semiconductor layer is equal to or smaller than 1.2×104 K/W·m2....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: OHKI, Yutaka, UMENO, Kazuyuki
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Beschreibung
Zusammenfassung:An electrode comprising a Ti layer and a Pt layer that are sequentially laid on a surface of a p-type semiconductor layer. Further, a thermal impedance per unit area of a contact portion that is in contact with the surface of the p-type semiconductor layer is equal to or smaller than 1.2×104 K/W·m2.