SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF

A device includes a first semiconductor layer that includes a first region provided between a first insulating portion and first conductive layers, a second region provided between a second insulating portion and second conductive layers, and a third region provided between the first region and the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HAMADA, Tatsufumi, MITSUNO, Yosuke, SOTOME, Shinichi, KUKI, Tomohiro
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A device includes a first semiconductor layer that includes a first region provided between a first insulating portion and first conductive layers, a second region provided between a second insulating portion and second conductive layers, and a third region provided between the first region and the second region. A first insulating layer includes a thickness (t1) from a surface in the first region to a gate insulating film. The first insulating layer includes a thickness (t2) from a surface in the second region to the gate insulating film. The first insulating layer includes a thickness (t3) from a surface in the third region to the gate insulating film, which is larger than t1-2 nanometers (nm), and larger than t2-2 nm.