SEMICONDUCTOR STRUCTURE HAVING AIR GAP DIELECTRIC

The present disclosure provides a semiconductor structure for reducing capacitive coupling between adjacent conductive features. The semiconductor structure includes a base layer, a plurality of conductive lines, a plurality of dielectric pillars, and a sealing layer having a plurality of sealing caps. The conductive lines are disposed on the base layer. The dielectric pillars are disposed on the base layer and separated from the conductive layer. The sealing caps are disposed between the conductive lines and the dielectric pillars, wherein the sealing caps are in contact with the conductive lines and the dielectric pillars, and separated from the base layer.