TRANSISTOR WITH IMPROVED SWITCHING
In one aspect, a method of fabricating a transistor includes depositing a first epitaxial layer having a first n-type dopant, depositing a first portion of a second epitaxial layer having a second n-type dopant on the first epitaxial layer, implanting ions into the first portion of the second epitax...
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Zusammenfassung: | In one aspect, a method of fabricating a transistor includes depositing a first epitaxial layer having a first n-type dopant, depositing a first portion of a second epitaxial layer having a second n-type dopant on the first epitaxial layer, implanting ions into the first portion of the second epitaxial layer to form a recombination region, depositing a second portion of the second epitaxial layer having the second n-type dopant on the recombination region, and forming trenches in the second portion of the second epitaxial layer, wherein the trenches comprise a trench gate of the transistor and a termination trench. The second portion of the second epitaxial layer is thicker than the first portion of the second epitaxial layer. |
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