Semiconductor Transducer Device with Multilayer Diaphragm and Method of Manufacturing a Semiconductor Transducer Device with Multilayer Diaphragm

In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from...

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Bibliographische Detailangaben
Hauptverfasser: Faes, Alessandro, Pijnenburg, Remco Henricus Wilhelmus, Siegert, Jörg, Besling, Willem Frederik Adrianus
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.