STRUCTURES FOR A HIGH-ELECTRON-MOBILITY TRANSISTOR AND RELATED METHODS

STRUCTURES FOR A HIGH-ELECTRON-MOBILITY TRANSISTOR AND RELATED METHODS

Structures for a high-electron-mobility transistor and methods of forming a structure for a high-electron-mobility transistor. The high-electron-mobility transistor has a first semiconductor layer, a second semiconductor layer adjoining the first semiconductor layer along an interface, a gate electr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lei, Jiacheng, Susai, Lawrence Selvaraj, Jerry, Joseph James
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Structures for a high-electron-mobility transistor and methods of forming a structure for a high-electron-mobility transistor. The high-electron-mobility transistor has a first semiconductor layer, a second semiconductor layer adjoining the first semiconductor layer along an interface, a gate electrode, and a source/drain region. An insulator region is provided in the first semiconductor layer and the second semiconductor layer. The insulator region extends through the interface at a location laterally between the gate electrode and the source/drain region.