VERTICALLY STACKED TRANSISTORS IN A FIN

VERTICALLY STACKED TRANSISTORS IN A FIN

An apparatus is provided which comprises: a fin; a layer formed on the fin, the layer dividing the fin in a first section and a second section; a first device formed on the first section of the fin; and a second device formed on the second section of the fin.

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Bibliographische Detailangaben
Hauptverfasser: Morrow, Patrick, Lilak, Aaron D, Weber, Justin R, Ma, Sean T, Mehandru, Rishabh
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An apparatus is provided which comprises: a fin; a layer formed on the fin, the layer dividing the fin in a first section and a second section; a first device formed on the first section of the fin; and a second device formed on the second section of the fin.