CHEMICAL-MECHANICAL POLISHING PARTICLE AND POLISHING SLURRY COMPOSITION COMPRISING SAME

The present disclosure provides chemical-mechanical polishing (CMP) particles exhibiting a high polishing rate and a high polishing quality of generating few defects or scratches due to their modified surface thereof. The present disclosure also provides a polishing slurry composition including the...

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Bibliographische Detailangaben
Hauptverfasser: CHO, Gyeong Sook, KIM, Jae Hyun, JIN, Sung Hoon, YOO, Jae Hong, SHIN, Kyu Soon, LEE, Goo Hwa, MOON, Weoun Gyuen, LEE, Min Gun, PARK, Jong Dai
Format: Patent
Sprache:eng
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Zusammenfassung:The present disclosure provides chemical-mechanical polishing (CMP) particles exhibiting a high polishing rate and a high polishing quality of generating few defects or scratches due to their modified surface thereof. The present disclosure also provides a polishing slurry composition including the polishing particles.