SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor layer having a first surface and a second surface opposite to the first surface, an active pattern on the first surface, the active pattern including a source/drain region, a power rail electrically connected to the source/drain region, and a power del...
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creator | KIM, Weonhong HYUN, Sangjin SASAKI, Yuichiro OH, Seungha LIM, Sungkeun HA, Yongho KANG, Pil-Kyu |
description | A semiconductor device includes a semiconductor layer having a first surface and a second surface opposite to the first surface, an active pattern on the first surface, the active pattern including a source/drain region, a power rail electrically connected to the source/drain region, and a power delivery network on the second surface, the power delivery network electrically connected to the power rail. The semiconductor layer includes an etch stop dopant, and the etch stop dopant has a maximum concentration at the second surface. |
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The semiconductor layer includes an etch stop dopant, and the etch stop dopant has a maximum concentration at the second surface.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211028&DB=EPODOC&CC=US&NR=2021335707A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211028&DB=EPODOC&CC=US&NR=2021335707A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM, Weonhong</creatorcontrib><creatorcontrib>HYUN, Sangjin</creatorcontrib><creatorcontrib>SASAKI, Yuichiro</creatorcontrib><creatorcontrib>OH, Seungha</creatorcontrib><creatorcontrib>LIM, Sungkeun</creatorcontrib><creatorcontrib>HA, Yongho</creatorcontrib><creatorcontrib>KANG, Pil-Kyu</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>A semiconductor device includes a semiconductor layer having a first surface and a second surface opposite to the first surface, an active pattern on the first surface, the active pattern including a source/drain region, a power rail electrically connected to the source/drain region, and a power delivery network on the second surface, the power delivery network electrically connected to the power rail. 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The semiconductor layer includes an etch stop dopant, and the etch stop dopant has a maximum concentration at the second surface.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SEMICONDUCTOR DEVICE |
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