SEMICONDUCTOR DEVICE

A semiconductor device includes a semiconductor layer having a first surface and a second surface opposite to the first surface, an active pattern on the first surface, the active pattern including a source/drain region, a power rail electrically connected to the source/drain region, and a power del...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM, Weonhong, HYUN, Sangjin, SASAKI, Yuichiro, OH, Seungha, LIM, Sungkeun, HA, Yongho, KANG, Pil-Kyu
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device includes a semiconductor layer having a first surface and a second surface opposite to the first surface, an active pattern on the first surface, the active pattern including a source/drain region, a power rail electrically connected to the source/drain region, and a power delivery network on the second surface, the power delivery network electrically connected to the power rail. The semiconductor layer includes an etch stop dopant, and the etch stop dopant has a maximum concentration at the second surface.