FIELD EFFECT TRANSISTOR, GAS SENSOR, AND MANUFACTURING METHOD THEREOF

An object is to provide a field effect transistor using a metal organic framework film as a semiconductor layer and having a novel structure. This embodiment is a field effect transistor that includes a substrate, a source electrode, a drain electrode, a gate electrode, and a metal organic framework...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SHIOTSUKI, Taishi, UKAI, Junzo, MINAMI, Tsuyoshi, SASAKI, Yui
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
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