FIELD EFFECT TRANSISTOR, GAS SENSOR, AND MANUFACTURING METHOD THEREOF

An object is to provide a field effect transistor using a metal organic framework film as a semiconductor layer and having a novel structure. This embodiment is a field effect transistor that includes a substrate, a source electrode, a drain electrode, a gate electrode, and a metal organic framework film as a semiconductor layer. The metal organic framework film has a stacked structure. A plurality of crystalline structures in which organic ligands having a π-conjugated skeleton and metal ions are coordinated to be developed in a planar direction of the substrate are stacked on the substrate via a π-π interaction in the stacked structure. The crystalline structures each have pores formed by the coordination of the organic ligands and the metal ions. The pores in the adjacent crystalline structures communicate with one another in a film thickness direction in the stacked structure. The field effect transistor is a top-contact type.