WAFER PRODUCTION METHOD

A wafer production method includes a separation layer forming step of positioning, from an end surface, the focal point of a laser beam with a wavelength having transmissibility with respect to a semiconductor ingot, at a depth corresponding to the thickness of a wafer to be produced, and irradiatin...

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Bibliographische Detailangaben
1. Verfasser:	NOMOTO, Asahi
Format:	Patent
Sprache:	eng
Schlagworte:	CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS
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Beschreibung
Zusammenfassung:	A wafer production method includes a separation layer forming step of positioning, from an end surface, the focal point of a laser beam with a wavelength having transmissibility with respect to a semiconductor ingot, at a depth corresponding to the thickness of a wafer to be produced, and irradiating the ingot with the laser beam to form a separation layer, a manufacturing history forming step of positioning the focal point of a laser beam with such a characteristic as not giving damage to a wafer to be produced next, to the upper surface of a region in which a device is not formed in the wafer to be produced, and irradiating the ingot with the laser beam to form a manufacturing history by ablation processing, and separating the wafer to be produced from the ingot using the separation layer as the point of origin, to produce the wafer.