SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device includes a substrate comprising a semiconductor fin, a gate structure over the semiconductor fin, and source/drain structures over the semiconductor fin and on opposite sides of the gate structure. The gate stack comprises a high-k dielectric layer; a first work function metal...

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Bibliographische Detailangaben
Hauptverfasser:	TZENG, Ju-Yuan, CHIANG, Hsin-Che, LIANG, Chun-Sheng, YEH, Jeng-Ya David, WANG, Shu-Hui, YEH, Chih-Yang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device includes a substrate comprising a semiconductor fin, a gate structure over the semiconductor fin, and source/drain structures over the semiconductor fin and on opposite sides of the gate structure. The gate stack comprises a high-k dielectric layer; a first work function metal layer over the high-k dielectric layer; an oxide of the first work function metal layer over the first work function metal layer; and a second work function metal layer over the oxide of the first work function metal layer, in which the first and second work function metal layers have different compositions; and a gate electrode over the second work function metal layer.